GATE OXIDE INTEGRITY OPTION

 

Oxide integrity of MOS devices can be evaluated by various techniques such as Time Dependent Dielectric Breakdown, Charge to Breakdown, or ramped voltage.  When used with a prober, map distribution of breakdown fields.  Output the data using histograms, cumulative failure, or Weibull plots.

Measurements include:

  • Time Zero Breakdown (Ramped)

  • Time Dependent Dielectric Breakdown (Current or Voltage)

  • Current-Time (JT)

  • Pulsed Voltage Breakdown

  • Dielectric Wearout Tests

goihist.gif (13060 bytes)

Histograms give a visual presentation of percentage failures versus breakdown field.

 

goicum.gif (13108 bytes)

Cumulative Failure plots are another way of viewing data.

 

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