|
|
|
|
MOS DOPING PROFILE ANALYSIS
MDC uses the comprehensive Ziegler algorithm to convert pulsed MOS C-V data to a doping profile. The doping profile is accurate from the oxide semiconductor interface to the maximum depletion depth and is therefore useful for low dose ion implant monitoring. Peak doping, range, and total active dose are computed. The technique is sensitive enough to resolve changes in the substrate doping profile due to redistribution during oxidation.
|
|
HOME ABOUT REPS NEW PRODUCTS SERVICES CONTACTS Copyright 1999-2010 Materials Development Corporation All rights reserved
|
